Microscopic Examination of the Silicon Surface Subjected to High-Dose Silver Implantation

Journal Article · Fri Feb 15 00:00:00 EST 2019 · Technical Physics

DOI:https://doi.org/10.1134/S1063784219020270· OSTI ID:22927771

Rogov, A. M.; Osin, Yu. N. ^[1]; Nuzhdin, V. I.; Valeev, V. F. ^[2]; Eidel’man, K. B.; Tabachkova, N. Yu. ^[3]; Ermakov, M. A. ^[4]; Stepanov, A. L. ^[1]

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1. Interdisciplinary Center for Analytical Microscopy, Kazan Federal University (Russian Federation)
2. Zavoiskii Physical Technical Institute, Kazan Scientific Center, Russian Academy of Sciences (Russian Federation)
3. National University of Science and Technology MISIS (Russian Federation)
4. Pacific National University (Russian Federation)

Low-energy (E = 30 keV) Ag{sup +} ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 10{sup 15} to 1.5 × 10{sup 17} ions cm{sup –2} and an ion beam current density varying from 2 to 15 μA/cm{sup 2}. The surface morphology of implanted wafers has been examined using scanning electron microscopy, transmission electron microscopy, and atomic force microscopy, and their structure has been studied by means of reflection high-energy electron diffraction and elemental microanalysis. It has been shown that for minimal irradiation doses used in experiments, the surface layer of c-Si experiences amorphization. It has been found that when the implantation dose is in excess of the threshold value (~3.1 × 10{sup 15} ions cm{sup –2}), Ag nanoparticles uniformly distributed over the Si surface arise in the irradiated Si layer. At a dose exceeding 10{sup 17} ions cm{sup –2}, a porous Si structure is observed. In this case, the Ag nanoparticle size distribution becomes bimodal with coarse particles localized at the walls of Si pores.

• OSTI ID: 22927771
• Journal Information: Technical Physics, Vol. 64, Issue 2; Other Information: Copyright (c) 2019 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7842
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ATOMIC FORCE MICROSCOPY
BEAM CURRENTS
COARSE PARTICLES
CURRENT DENSITY
ELECTRON DIFFRACTION
ION BEAMS
ION IMPLANTATION
IRRADIATION
KEV RANGE
MICROANALYSIS
MONOCRYSTALS
MORPHOLOGY
NANOPARTICLES
POROUS MATERIALS
RADIATION DOSES
REFLECTION
SCANNING ELECTRON MICROSCOPY
SILICON
SILVER
SILVER IONS
SURFACES
TRANSMISSION ELECTRON MICROSCOPY