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Title: Formation of Porous Germanium Layers by Silver-Ion Implantation

Journal Article · · Technical Physics Letters
 [1]; ;  [2];  [1]
  1. Kazan Federal University, Interdisciplinary Center for Analytical Microscopy (Russian Federation)
  2. Russian Academy of Sciences, Kazan E.K. Zavoisky Physical Technical Institute, Kazan Scientific Center (Russian Federation)

We propose a method for the formation of porous germanium (P-Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag{sup +} ions into single-crystalline germanium (c-Ge). This is demonstrated by implantation of 30-keV Ag{sup +} ions into a polished c-Ge plate to a dose of 1.5 × 10{sup 17} ion/cm{sup 2} at an ion beam-current density of 5 μA/cm{sup 2}. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RHEED) showed that the implantation of silver ions into c-Ge surface led to the formation of a P-Ge layer with spongy structure comprising a network of interwoven nanofibers with an average diameter of ∼10–20 nm Ag nanoparticles on the ends of fibers. It is also established that the formation of pores during Ag{sup +} ion implantation is accompanied by effective sputtering of the Ge surface.

OSTI ID:
22786477
Journal Information:
Technical Physics Letters, Vol. 44, Issue 4; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7850
Country of Publication:
United States
Language:
English