On the Adsorption of Gases on Silicon Carbide: Simple Estimates

Journal Article · Thu Aug 15 04:00:00 EDT 2019 · Physics of the Solid State

DOI:https://doi.org/10.1134/S1063783419080109· OSTI ID:22925157

Posrednik, O. V. ^[1]

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1. Saint-Petersburg Electrotechnical University (Russian Federation)

The adsorption of atomic and molecular nitrogen and ammonia on silicon carbide is considered within two physically different (solid-state and quantum-chemical) approaches. In the solid-state approach, the Haldane–Anderson model is used for the density of states of the SiC 4H and 6H polytypes to demonstrate that the energy of binding to the substrate is 6 and 3 eV for N atoms and N{sub 2} molecule, respectively. In the quantum-chemical approach, the model of a surface diatomic molecule is used to find that the binding energy of atomic nitrogen is 6 and 4 eV for adsorption on the C- and Si-edges, respectively. It has been established that the charge transfer between an adsorbate and the substrate may be neglected in all the considered cases. It has been hypothesized that the dissociation of a molecule with the further passivation of its dangling sp{sup 3}-orbitals with hydrogen atoms takes place for silicon carbide as in the case of ammonia adsorption on Si(100).

• OSTI ID: 22925157
• Journal Information: Physics of the Solid State, Journal Name: Physics of the Solid State Journal Issue: 8 Vol. 61; ISSN 1063-7834
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
AMMONIA
ATOMS
BINDING ENERGY
CARBON
DENSITY OF STATES
DISSOCIATION
HYDROGEN
HYDROGEN 4
HYDROGEN 6
MOLECULES
NITROGEN
PASSIVATION
SILICON
SILICON CARBIDES
SOLIDS