Electronic states in epitaxial graphene fabricated on silicon carbide
An analytical expression for the density of states of a graphene monolayer interacting with a silicon carbide surface (epitaxial graphene) is derived. The density of states of silicon carbide is described within the Haldane-Anderson model. It is shown that the graphene-substrate interaction results in a narrow gap of {approx}0.01-0.06 eV in the density of states of graphene. The graphene atom charge is estimated; it is shown that the charge transfer from the substrate is {approx}10{sup -3}-10{sup -2}e per graphene atom.
- OSTI ID:
- 22004752
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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