Electron Diffraction Study of Epitaxial Graphene Structure Grown upon SiC (0001) Thermal Destruction in Ar Atmosphere and in High Vacuum
Journal Article
·
· Physics of the Solid State
- National Research University of Information Technologies, Mechanics and Optics (Russian Federation)
We have studied the structure of epitaxial graphene obtained as a result of thermal desorption of the silicon carbide surface under conditions of vacuum synthesis and in Ar medium by reflection electron diffraction. As a result of the study, a significantly more uniform buffer layer coating of the SiC surface by epitaxial graphene has been found when forming in inert medium on the surface of 4H- and 6H-SiC(0001) polytypes compared with the synthesis of graphene in high vacuum. The quality of the coating has been shown to depend on the degree of perfection of the original single crystal.
- OSTI ID:
- 22925090
- Journal Information:
- Physics of the Solid State, Journal Name: Physics of the Solid State Journal Issue: 10 Vol. 61; ISSN 1063-7834
- Country of Publication:
- United States
- Language:
- English
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