Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands
Journal Article
·
· Russian Physics Journal
Nucleation of Ge islands on a stepped Si(100) surface is studied. It is shown by diffraction of fast electrons that at a temperature of 600°C, constant flux of Si, and deposition rate of 0.652 Å/s, a series of the 1×2 superstructure reflections completely disappears, if the Si (100) substrate deviated by an angle of 0.35° to the (111) face is preliminarily heated to 1000°C. The disappearance of the 1×2 superstructure reflexes is due to the transition from the surface with monoatomic steps to that with diatomic ones. Investigations of the Ge islands’ growth were carried out on the Si(100) surface preliminarily annealed at temperatures of 800 and 1000°C. It is shown that the islands tend to nucleate at the step edges.
- OSTI ID:
- 22863417
- Journal Information:
- Russian Physics Journal, Journal Name: Russian Physics Journal Journal Issue: 11 Vol. 60; ISSN RPJOEB; ISSN 1064-8887
- Country of Publication:
- United States
- Language:
- English
Similar Records
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands
Threshold Behavior of the Formation of Nanometer Islands in a Ge/Si(100) System in the Presence of Sb
Triangular step instability and 2D/3D transition during the growth of strained Ge films on Si(100)
Journal Article
·
Thu Mar 15 00:00:00 EDT 2018
· Semiconductors
·
OSTI ID:22750036
Threshold Behavior of the Formation of Nanometer Islands in a Ge/Si(100) System in the Presence of Sb
Journal Article
·
Sun May 15 00:00:00 EDT 2005
· Semiconductors
·
OSTI ID:20718897
Triangular step instability and 2D/3D transition during the growth of strained Ge films on Si(100)
Conference
·
Fri Mar 31 23:00:00 EST 1995
·
OSTI ID:100226