Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

Journal Article · Thu Mar 15 04:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618030107· OSTI ID:22750036

Nikiforov, A. I.; Timofeev, V. A.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Deryabin, A. S.; Pchelyakov, O. P. ^[1]

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1. Russian Academy of Sciences, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)

The transition from a two-domain to one-domain surface on a Si(100) substrate is investigated. It is demonstrated using reflection high-energy electron diffraction that at a temperature of 600°C and a deposition rate of 0.652 Å/s onto a Si(100) substrate pre-heated to 1000°C and inclined at an angle of 0.35°C to the plane, a series of reflections from the 1 × 2 superstructure completely vanishes at a constant flow of Si. This is attributed to the transition of the surface from monoatomic to diatomic steps. At growth rates lower than 0.652 Å/s, the transition from a two-domain to one-domain surface is also observed; with a decrease in the growth rate, the intensity ratio I{sub 2×1}/I{sub 1×2} decreases and the maximum of the dependences shifts toward lower temperatures. The complete vanishing of the series of superstructural reflections after preliminary annealing at a temperature of 700°C is not observed; this series only vanishes after annealing at 900 and 1000°C. The growth of Ge islands on a Si(100) surface preliminary annealed at a temperature of 800°C is studied. It is shown that the islands tend to nucleate at the step edges. A mechanism of Ge island ordering on the Si(100) surface is proposed.

• OSTI ID: 22750036
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
ELECTRON DIFFRACTION
GERMANIUM
ISLANDS
NANOSTRUCTURES
REFLECTION