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Modeling and Understanding of Rear Junction Double-Side Passivated Contact Solar Cells with Selective Area TOPCon on Front

Journal Article · · Conference Record of the IEEE Photovoltaic Specialists Conference
 [1];  [2];  [2];  [2];  [2];  [2]
  1. Georgia Institute of Technology, Atlanta, GA (United States); Georgia Tech Research Corporation
  2. Georgia Institute of Technology, Atlanta, GA (United States)
Device modeling is performed to propose > 25% efficient industry-compatible rear junction double-side passivated contacts solar cell structure with full area p-TOPCon on the rear and selective area n-TOPCon under the front grid pattern (selective TOPCon). Here, this design enables the use of thicker TOPCon (>100nm) on the front for traditional screen-printed contacts without incurring metal-induced damage, high parasitic absorption loss, and compromise in lateral transport or carrier collection on the front. Rear junction design with appropriate bulk lifetime and resistivity combination eliminate the need for heavy doping in the front field region because carriers can flow through the bulk Si without appreciable FF loss. High VOC is maintained because high-quality Si surface passivation in the field region by Al2O3/SiN gives J0 comparable to the TOPCon. Our device modeling specifies the practically achievable properties and parameters for each region, including full area rear p-TOPCon, selective area front n-TOPCon, bulk and contacts, to achieve 25.4% efficiency screen-printed bifacial rear junction selective TOPCon cells.
Research Organization:
Georgia Tech Research Corporation, Atlanta, GA (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0008562; EE0009350
OSTI ID:
2282748
Journal Information:
Conference Record of the IEEE Photovoltaic Specialists Conference, Journal Name: Conference Record of the IEEE Photovoltaic Specialists Conference; ISSN 0160-8371
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

References (26)

Approaching 23% with large‐area monoPoly cells using screen‐printed and fired rear passivating contacts fabricated by inline PECVD journal December 2018
Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W journal July 2019
On the recombination behavior of p + -type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces: On the recombination behavior of p + -type polysilicon on oxide junctions journal May 2017
Unexpectedly High Minority‐Carrier Lifetimes Exceeding 20 ms Measured on 1.4‐Ω cm n‐Type Silicon Wafers journal September 2017
Metallisation of Boron-Doped Polysilicon Layers by Screen Printed Silver Pastes journal October 2017
Silicon Solar Cell Architecture with Front Selective and Rear Full Area Ion-Implanted Passivating Contacts journal June 2017
Self-consistent optical parameters of intrinsic silicon at 300K including temperature coefficients journal November 2008
Reassessment of intrinsic lifetime limit in n-type crystalline silicon and implication on maximum solar cell efficiency journal November 2018
Surface passivation of crystalline silicon solar cells: Present and future journal December 2018
Development of thin polysilicon layers for application in monoPoly™ cells with screen-printed and fired metallization journal April 2020
Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact journal August 2020
Evolutionary PERC+ solar cell efficiency projection towards 24% evaluating shadow-mask-deposited poly-Si fingers below the Ag front contact as next improvement step journal August 2020
Reactive ion etched, self-aligned, selective area poly-Si/SiO2 passivated contacts journal November 2020
Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al2O3 with SiNx capping journal December 2020
Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26% journal March 2017
Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses journal April 2021
Optical properties of phosphorus‐doped polycrystalline silicon layers journal November 1981
Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency journal December 2015
Toward the Practical Limits of Silicon Solar Cells journal November 2014
Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact journal September 2017
Design, Optimization, and In-Depth Understanding of Front and Rear Junction Double-Side Passivated Contacts Solar Cells journal September 2021
OPAL 2: Rapid optical simulation of silicon solar cells conference June 2012
Boron Selective Emitter Formation With Un-metallized J0e of 13fA/cm2 For Silicon Solar Cell Applications conference June 2020
Quantitative Understanding and Implementation of Screen Printed p+ Poly-Si/Oxide Passivated Contact to Enhance the Efficiency of p-PERC Cells conference June 2020
A Free and Fast Three-Dimensional/Two-Dimensional Solar Cell Simulator Featuring Conductive Boundary and Quasi-Neutrality Approximations journal February 2013
Improvement of Metal-Oxide Semiconductor Interface Characteristics in Complementary Metal-Oxide Semiconductor on Si(111) by Combination of Fluorine Implantation and Long-Time Hydrogen Annealing journal January 2006