Characterization of the Surface of Silver Ion-Implanted Silicon by Optical Reflectance

Journal Article · Wed Nov 15 04:00:00 EST 2017 · Journal of Applied Spectroscopy

DOI:https://doi.org/10.1007/S10812-017-0545-9· OSTI ID:22810306

Vorobev, V. V. ^[1]; Nuzhdin, V. I.; Valeev, V. F. ^[2]; Osin, Yu. N. ^[1]

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1. Kazan Federal University (Russian Federation)
2. Russian Academy of Sciences, Kazan Physical-Technical Institute Kazan Scientific Center (Russian Federation)

The optical reflection of the surface of silicon implanted with Ag{sup +} ions at low energy of 30 keV in a wide dosage range of 5.0·10{sup 14}–1.5·10{sup 17} ion/cm{sup 2} was studied in parallel with electron microscopy observation of the samples. It was found that with increasing ion dose of irradiation, the reflection intensity in the UV range of the Si spectrum decreases monotonically due to amorphization and macrostructuring of Si near-surface layer. In the long-wavelength region of the reflection spectra, a selective band with a maximum near 830 nm is recorded due to the plasmon resonance of ion-synthesized Ag nanoparticles.

• OSTI ID: 22810306
• Journal Information: Journal of Applied Spectroscopy, Journal Name: Journal of Applied Spectroscopy Journal Issue: 5 Vol. 84; ISSN 0021-9037
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
AMORPHOUS STATE
ELECTRON MICROSCOPY
ION IMPLANTATION
IRRADIATION
KEV RANGE 10-100
LAYERS
NANOPARTICLES
OPTICAL REFLECTION
PLASMONS
RADIATION DOSES
SILICON
SILVER IONS
SPECTRA
WAVELENGTHS