Comparison of purity in single walled carbon nanotube gas detectors with Pd and Ti electrodes using low frequency noise techniques
- Equipe composants électroniques (UR11ES89), Institut Préparatoire aux Etudes d’Ingénieurs de Nabeul (IPEIN), Université de Carthage, 8000 Merazka, Nabeul (Tunisia)
- Laboratoire de Chimie et des Matériaux Fonctionnels, Thales Research and Technology, Palaiseau 91767 (France)
This work deals with oxide traps properties of single walled carbon nanotubes (SWCNTs) based gas sensors using Random telegraph signals (RTS) and low frequency (LF) noise techniques. RTS signals are two or more levels switching events that we observe measuring the drain current of transistors with Ti (RTS{sub 1}) and Pd (RTS{sub 2}) contacts. RTS noise is analyzed in time and frequency domains. Time domain analysis allows us to identifying slow traps (three traps) responsible to RTS noises (energetic position and cross capture section). These traps undetectable by other techniques, e.g. deep level transient spectroscopy (DLTS) technique, are localized in the gate oxide region. The spatial localization of the three traps in the SWCNT/SiO{sub 2} interface are determined using numerical simulations (y{sub Trap1} ≈0.6 nm, y{sub Trap2} ≈0.9 nm and y{sub Trap3} ≈0.3 nm). (RTS{sub 1}) noise is attributed to trap1 and (RTS{sub 2}) to traps 2 and 3. From RTS analysis in frequency domain, are able to extract the cut-off frequencies of a single trap even at very low frequencies (for RTS{sub 1} noise f{sub c} = 10 Hz (trap1) and for RTS{sub 2} noise f{sub c1} = 4 Hz (trap2), f{sub c2} = 50 Hz (trap 3)). These results are in good agreement with those obtained by analysis in time domain and confirm the localization of each trap from the SWCNT/SiO{sub 2} interface. This is the first time that this kind of studies is performed on CNTFETs used as gas sensors and gives us some interesting hints on the potential phenomena related to these new generation of carbon based nanomaterials based devices in the field of electronics.
- OSTI ID:
- 22805414
- Journal Information:
- Materials Research Bulletin, Vol. 99; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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