Structure transformation of Ti films deposited on SiC single crystal substrates

Journal Article · Fri Dec 15 04:00:00 EST 2017 · Materials Characterization

DOI:https://doi.org/10.1016/J.MATCHAR.2017.09.041· OSTI ID:22804807

Li, Lei ^[1]; Liu, Yan ^[2]; Mao, Xiaonan; Zeng, Liying ^[1]; JI, Vincent ^[3]

---

1. Northwest Institute for Nonferrous Metal Research, Xian, ShannXi 710016 (China)
2. Northeastern Universities, Shenyang, LiaoNing 110819 (China)
3. LEMHE/ICMMO, UMR 8182, University Paris-Sud11, Orsay 91405 (France)

Highlights: • In this paper, an interesting intermediate state of the fcc-hcp transformation in Ti films was observed. • We figured this intermediate structure out by XRD and HRTEM. • The formation of this intermediate state and the mechanism of thickness-dependent fcc-hcp transformation were discussed. - Abstract: This paper reports the structure transformation of Ti films deposited on SiC(0001) single crystal substrates using DC magnetron sputtering. Film thickness, sputter power and temperature of deposition were changed to investigate structure transformation of Ti films. The structure characterization of Ti film was performed by means of X-Ray Diffraction (XRD) and High-Resolution Transmission Electron Microscope (HRTEM). The results showed that the Ti film grew epitaxially with a face centered cubic (fcc) structure even the thickness is up to about 50 nm. High temperature and low sputter power are propitious to the formation of fcc-Ti. An interesting intermediate state of the fcc-hcp transformation was observed. This intermediate structure could help us to understand the mechanism of thickness-dependent fcc-hcp transformation in Ti thin films.

• OSTI ID: 22804807
• Journal Information: Materials Characterization, Journal Name: Materials Characterization Vol. 134; ISSN 1044-5803; ISSN MACHEX
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL-PHASE TRANSFORMATIONS
DEPOSITION
EPITAXY
FCC LATTICES
HCP LATTICES
INTERMEDIATE STATE
INTERMEDIATE STRUCTURE
MAGNETRONS
MONOCRYSTALS
SILICON CARBIDES
SPUTTERING
SUBSTRATES
THICKNESS
THIN FILMS
TITANIUM
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION