Short-Range Order and Charge Transport in SiO{sub x}: Experiment and Numerical Simulation

Journal Article · Fri Jun 15 04:00:00 EDT 2018 · Technical Physics Letters

DOI:https://doi.org/10.1134/S1063785018060196· OSTI ID:22786379

Novikov, Yu. N. ^[1]; Chin, A. ^[2]

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1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
2. National Chiao Tung University (China)

The structure of nonstoichiometric silicon oxide (SiO{sub x}) has been studied by the methods of highresolution X-ray photoelectron spectroscopy and fundamental optical-absorption spectroscopy. The conductivity of SiO{sub x} (x = 1.4 and 1.6) films has been measured in a wide range of electric fields and temperatures. Experimental data are described in terms of the proposed SiO{sub x} structure model based on the concept of fluctuating chemical composition leading to nanoscale fluctuations in the electric potential. The maximum amplitude of potential fluctuations amounts to 2.6 eV for electrons and 3.8 eV for holes. In the framework of this model, the observed conductivity of SiO{sub x} is described by the Shklovskii–Efros theory of percolation in inhomogeneous media. The characteristic spatial scale of potential fluctuations in SiO{sub x} films is about 3 nm. The electron-percolation energy in SiO{sub 1.4} and SiO{sub 1.6} films is estimated to be 0.5 and 0.8 eV, respectively.

• OSTI ID: 22786379
• Journal Information: Technical Physics Letters, Journal Name: Technical Physics Letters Journal Issue: 6 Vol. 44; ISSN 1063-7850
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
CHARGE TRANSPORT
COMPUTERIZED SIMULATION
FILMS
FLUCTUATIONS
SILICON OXIDES
X-RAY PHOTOELECTRON SPECTROSCOPY