The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas

Journal Article · Sun Jul 15 04:00:00 EDT 2018 · Technical Physics Letters

DOI:https://doi.org/10.1134/S1063785018070106· OSTI ID:22786370

Sakharov, A. V.; Zavarin, E. E.; Zakgeim, D. A.; Nikolaev, A. E.; Brunkov, P. N.; Yagovkina, M. A. ^[1]; Tsatsul’nikov, A. F. ^[2]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
2. Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation)

AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2–1.5 times higher.

• OSTI ID: 22786370
• Journal Information: Technical Physics Letters, Journal Name: Technical Physics Letters Journal Issue: 7 Vol. 44; ISSN 1063-7850
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
BUFFERS
CRYSTALS
DENSITY
EDGE DISLOCATIONS
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM NITRIDES
INDIUM COMPOUNDS
IRON ADDITIONS
LAYERS
ORGANOMETALLIC COMPOUNDS
SAPPHIRE
SUBSTRATES
VAPOR PHASE EPITAXY