A study of the effect of electron and proton irradiation on 4H-SiC device structures
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
- Peter the Great St. Petersburg Polytechnic University (Russian Federation)
The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (N{sub d}–N{sub a}) in the base electrode of Schottky diodes and JBS diodes based on 4H-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm{sup –1} under electron irradiation and 50–70 cm{sup –1} under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm{sup –2}. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon p–i–n diodes with similar breakdown voltages.
- OSTI ID:
- 22784018
- Journal Information:
- Technical Physics Letters, Vol. 43, Issue 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7850
- Country of Publication:
- United States
- Language:
- English
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