Effect of Tuning the Structure on the Optical and Magnetic Properties by Various Transition Metal Doping in ZnO/TM (TM = Fe, FeCo, Cr, and Mn) Thin Films
- Ibn Tofail University, Laboratory of Optoelectronics, Physical Chemistry Materials and Environmental, Department of Physics, Faculty of Sciences (Morocco)
- University Abdelmalek Essaadi-FST Tangier, Laboratory of Materials and Valorization of Natural Resources (Morocco)
- Mohammed V University-Agdal, Laboratory of Magnetism and High Energies Physics, URAC 12, Department of Physics, Faculty of Science (Morocco)
We have investigated in this work the physical, optical, electronic, and the magnetic behavior (Curie temperature, magnetic moment) of Zn.1-x.MxO (M = Fe 5%, Co 1%, Cr 5%, and Mn 5%), diluted magnetic semiconductors (DMSs). The samples were deposited on glass substrate by the spray pyrolysis technique, and the results of the x-ray diffraction (XRD) of the prepared substrates was used to prove the incorporation of the dopants into the ZnO lattice host; the ferromagnetic and the antiferromagnetic state competitions and their effects on the physical, magnetic, and optical properties, were investigated. The electronic structure and magnetic properties of transition metal (TM) defects, were investigated in detail, by using the Korringa–Kohn–Rostoker (KKR) method combined with the coherent potential approximation (CPA). As a result, doping by TM impurities induce the ferromagnetism with different competitions between the ferromagnetic and antiferromagnetic states, which affects the physical properties of the TM (Fe, Fe/Co, Cr, and Mn)-doped ZnO, with a Curie temperature closer to room-temperature ferromagnetic.
- OSTI ID:
- 22774107
- Journal Information:
- Journal of Superconductivity and Novel Magnetism, Journal Name: Journal of Superconductivity and Novel Magnetism Journal Issue: 2 Vol. 31; ISSN 1557-1939
- Country of Publication:
- United States
- Language:
- English
Similar Records
Controlling ferromagnetism of (In,Fe)As semiconductors by electron doping
Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIFERROMAGNETISM
CURIE POINT
DEFECTS
DOPED MATERIALS
ELECTRONIC STRUCTURE
FERROMAGNETISM
GLASS
IMPURITIES
MAGNETIC MOMENTS
MAGNETIC PROPERTIES
MAGNETIC SEMICONDUCTORS
OPTICAL PROPERTIES
PYROLYSIS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSITION ELEMENTS
X-RAY DIFFRACTION
ZINC OXIDES