Raising the Operating Temperature of (Ga,Mn)As/GaAs Spin Light Emitting Diodes by Applying Post-Growth Treatment

Journal Article · Thu Nov 15 04:00:00 EST 2018 · Physics of the Solid State

DOI:https://doi.org/10.1134/S1063783418110185· OSTI ID:22770925

Dorokhin, M. V.; Danilov, Yu. A. ^[1]; Parafin, A. E. ^[2]; Ved’, M. V.; Kudrin, A. V.; Zdoroveyshchev, A. V. ^[1]

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1. Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod (Russian Federation)
2. Institute for Physics of Microstructures, Branch of the Institute of Applied Physics,Russian Academy of Sciences (Russian Federation)

Abstract—Spin light emitting diodes (spin-LEDs) containing (Ga,Mn)As ferromagnetic layers are fabricated based on InGaAs/GaAs heterostructures and studied. We achieve increases in the operating temperatures of our spin-LEDs by subjecting the surface of the structures, prior to depositing an ohmic metal contact, to pulsed laser annealing. The fabricated devices produce circularly polarized electroluminescence when placed in an external magnetic field. The temperatures at which circularly polarized electroluminescence is still observed is raised from 30 K for unprocessed structure to 110 K for laser-annealed structures. The observed effect is linked to an increase in the Curie temperature of the (Ga,Mn)As layer as a result of laser impact.

• OSTI ID: 22770925
• Journal Information: Physics of the Solid State, Journal Name: Physics of the Solid State Journal Issue: 11 Vol. 60; ISSN 1063-7834
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ARSENIC COMPOUNDS
CRYSTAL GROWTH
CURIE POINT
ELECTROLUMINESCENCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
LASER RADIATION
LAYERS
LIGHT EMITTING DIODES
MAGNETIC FIELDS
MANGANESE COMPOUNDS
METALS
PULSES
SPIN
SURFACES