Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier

Journal Article · Sun Nov 15 04:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615110147· OSTI ID:22469697

Dorokhin, M. V.; Ved’, M. V.; Kudrin, A. V.; Zdoroveishchev, A. V. ^[1]

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1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)

The comparative investigation of circularly polarized electroluminescence in Zener diodes based on InGaAs/n-GaAs/n{sup +}-GaAs/GaMnAs and InGaAs/n-GaAs/n{sup +}-GaAs/GaMnSb is carried out. It is established that the circularly polarized electroluminescence is associated with the spin injection of electrons from a ferromagnetic semiconductor layer. The luminescence parameters are determined by the properties of these layers. It is shown that the ferromagnetic properties of the GaMnSb layer allow us to obtain circularly polarized emission at room temperature from InGaAs/n-GaAs/n{sup +}-GaAs/GaMnSb heterostructures.

• OSTI ID: 22469697
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTROLUMINESCENCE
ELECTRONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
JUNCTION DIODES
LAYERS
MANGANESE ARSENIDES
N-TYPE CONDUCTORS
SPIN
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT
VISIBLE RADIATION