InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates

Journal Article · Tue Aug 15 04:00:00 EDT 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617080310· OSTI ID:22756413

Parkhomenko, Ya. A.; Moiseev, K. D.; Nevedomsky, V. N.; Bert, N. A. ^[1]

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1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)

Indium-antimonide quantum dots are for the first time formed on the surface of an epitaxial In{sub 0.25}GaAsSb layer isoperiodic to a GaSb(001) substrate by liquid-phase epitaxy in the range of temperatures T = 450–467°C. Transmission electron microscopy shows that, the shape of quantum dots is close to a truncated cone and their distribution in terms of height and base size in the ensemble is monomodal. Large-sized quantum dots (with a base size of 30–50 nm and height of 3 nm) exhibit specific contrast in the plane-view diffraction-mode image, which is indicative of the presence of misfit defects. Modification of the chemical composition of the working surface of the substrate by the deposition of an epitaxial In{sub 0.25}GaAsSb layer makes possible a threefold increase in the density of the ensemble of InSb quantum dots (1 × 10{sup 10} cm{sup –2}) compared to the density in the case of deposition directly onto the GaSb binary compound.

• OSTI ID: 22756413
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 51; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABLATION
CHEMICAL COMPOSITION
GALLIUM ANTIMONIDES
INDIUM ANTIMONIDES
LIQUID PHASE EPITAXY
QUANTUM DOTS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY