High-density, uniform InSb/GaSb quantum dots emitting in the midinfrared region

Journal Article · Mon Dec 25 04:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2425041· OSTI ID:20880204

Tasco, V; Deguffroy, N; Baranov, A N; Tournie, E; Satpati, B; Trampert, A; Dunaevskii, M S; Titkov, A ^[1]

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1. Intistut d'Electronique du Sud, Universite Montpellier 2-CNRS, UMR 5214, Place Eugene Bataillon, F-34095 Montpellier cedex 5 (France)

The authors have developed a multistep molecular-beam epitaxy growth technique which allows them to grow InSb quantum dots with high structural perfection and high density. This technique consists in the deposition at a very low temperature followed by a properly designed annealing step. Fully strained InSb/GaSb quantum dots with a density exceeding 7x10{sup 10} cm{sup -2} and lateral sizes in the 20-30 nm range have been obtained. Narrow photoluminescence emission is obtained around 3.5 {mu}m up to room temperature.

• OSTI ID: 20880204
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DEPOSITION
GALLIUM ANTIMONIDES
INDIUM ANTIMONIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K