Specific features of the ion-beam synthesis of Ge nanocrystals in SiO{sub 2} thin films
- Novosibirsk State University (Russian Federation)
- Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
- Helmholtz-Center Dresden–Rossendorf, Institute of Ion-Beam Physics and Materials Research (Germany)
The systematic features of the formation of Ge nanocrystals in SiO{sub 2} thin films implanted with Ge{sup +} ions and then subjected to high-temperature annealing (1130°C) are studied in relation to hydrostatic pressure. It is established that annealing at atmospheric pressure is accompanied by the diffusion of Ge atoms from the implantation region to the Si substrate and does not induce the formation of Ge nanocrystals. An increase in pressure during annealing yields a deceleration in the diffusion of germanium into silicon and is accompanied by the formation of twinned lamellae at the Si/SiO{sub 2} interface (at pressures of ~10{sup 3} bar) or by the nucleation and growth of Ge nanocrystals (at pressures of ~10{sup 4} bar) in the SiO{sub 2} film. The results are discussed on the basis of the concept of a change in the activation volume of the formation and migration of point defects under conditions of compression.
- OSTI ID:
- 22756374
- Journal Information:
- Semiconductors, Vol. 51, Issue 9; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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