Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
- Lobachevsky State University of Nizhny Novgorod (Russian Federation)
A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after γ-neutron irradiation with a fluence of 0.4 × 10{sup 14} cm{sup –2} is suggested. The results of physical–topological simulation of an AlGaN/GaN HEMT on a SiC substrate are described. The error in calculating the GaN HEMT parameters due to inaccuracy in determining the electron distribution profile is determined.
- OSTI ID:
- 22756250
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 51; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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