Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures
- Novosibirsk State University (Russian Federation)
It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.
- OSTI ID:
- 22756246
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 51; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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