Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission

Journal Article · Fri Dec 15 04:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S106378261712017X· OSTI ID:22756239

Kadykov, A. M.; Fadeev, M. A.; Dubinov, A. A.; Utochkin, V. V. ^[1]; Mikhailov, N. N.; Dvoretskii, S. A. ^[2]; Morozov, S. V.; Gavrilenko, V. I. ^[1]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

The photoluminescence and stimulated emission during interband transitions in quantum wells based on HgCdTe placed in an insulator waveguide based on a wide-gap CdHgTe alloy are studied. Heterostructures with quantum wells based on HgCdTe are of interest for the development of long-wavelength lasers in the range of 25–60 μm, which is currently unattainable for quantum-cascade lasers. Optimal designs of quantum wells for attainment of long-wavelength stimulated emission under optical pumping are discussed. It is shown that narrow quantum wells from pure HgTe appear to be more promising for long-wavelength lasers in comparison with wide (potential) wells from the alloy due to the suppression of Auger recombination. It is demonstrated that molecular-beam epitaxy makes it possible to obtain structures for the localization of radiation with a wavelength of up to 25 μm at a high growth rate. Stimulated emission is obtained for wavelengths of 14–6 μm with a threshold pump intensity in the range of 100–500 W/cm{sup 2} at 20 K.

• OSTI ID: 22756239
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 51; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
CRYSTAL GROWTH
LASERS
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
OPTICAL PUMPING
QUANTUM WELLS
STIMULATED EMISSION
WAVEGUIDES