Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells

Journal Article · Thu Nov 15 04:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618110234· OSTI ID:22749735

Kulikov, N. S.; Kadykov, A. M.; Fadeev, M. A. ^[1]; Ikonnikov, A. V.; Kazakov, A. S. ^[2]; Zholudev, M. S.; Aleshkin, V. Ya.; Utochkin, V. V. ^[1]; Mikhailov, N. N.; Dvoretskii, S. A. ^[3]; Morozov, S. V.; Gavrilenko, V. I. ^[1]

---

1. Institute for Physics of Microstructures, Russian Academy of Sciences (Russian Federation)
2. Moscow State University (Russian Federation)
3. Institute for Semiconductor Physics, Russian Academy of Sciences, Siberian Branch (Russian Federation)

We report on the stimulated emission obtained in the wavelength range of 20.3–17.4 μm on the interband transitions at T = 8–50 K in HgCdTe quantum wells placed in a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with HgCdTe quantum wells are interesting for designing long-wavelength lasers operating in the wavelength range of 25–60 μm, which is not covered by currently available quantum cascade lasers. It is shown that the maximum temperature of stimulated emission is determined by the position of lateral maxima in the dispersion dependences in the first valence subband of the quantum well. Methods for suppressing nonradiative recombination in the structures with HgCdTe quantum wells are discussed.

• OSTI ID: 22749735
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIELECTRIC MATERIALS
QUANTUM WELLS
SOLID SOLUTIONS
STIMULATED EMISSION