Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells

Journal Article · Mon Jan 15 00:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618010062· OSTI ID:22756181

Bobrov, M. A.; Blokhin, A. A.; Kuzmenkov, A. G.; Vasil’ev, A. P.; Zadiranov, Yu. M.; Evropeytsev, E. A.; Sakharov, A. V. ^[1]; Ledentsov, N. N. ^[2]; Karachinsky, L. Ya. ^[1]; Ospennikov, A. M. ^[3]; Maleev, N. A.; Ustinov, V. M. ^[1]

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1. Ioffe Institute (Russian Federation)
2. VI Systems GmbH (Germany)
3. Russia Institute of Radionavigation and Time RIRT (Russian Federation)

The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the emission line for a laser with a 2-μm oxide current aperture attains it minimum (~110 MHz) at an output power of 0.8 mW. As the optical output power is further increased, anomalous broadening of the emission line is observed; this is apparently caused by an increase in the α-factor as a result of a decrease in the differential gain in the active region under conditions of increased concentration of charge carriers and of high internal optical losses in the microcavity. The α-factor is estimated using two independent methods.

• OSTI ID: 22756181
• Journal Information: Semiconductors, Vol. 52, Issue 1; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CHARGE CARRIERS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
MHZ RANGE
NUCLEAR MAGNETIC RESONANCE
OXIDES
QUANTUM WELLS