InGaAs vertical-cavity surface-emitting lasers

Journal Article · Sat Jun 01 00:00:00 EDT 1991 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.89952· OSTI ID:5627409

Geels, R S; Corzine, S W; Coldren, L A ^[1]

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1. Dept. of Electrical and Computer Engineering, Univ. of California, Santa Barbara, CA (US)

In this paper the authors give theoretical and experimental results for vertical-cavity surface-emitting lasers (VCSEL's). The modeling is applied to the design of InGaAs VCSEL's A simple method is introduced to calculate the reflectivity of semiconductor stack mirrors with graded interfaces and compound metal/semiconductor stack mirrors. The theoretical predictions are compared to results from actual device measurements. A novel technique is introduced to determine material parameters: fabrication of in-plane lasers from VCSEL material. The procedure used to determine the optical model in such an in-plane laser is described. Using the insight gained from our modeling, we have increased our external efficiency to {gt}30% with a threshold current density of 1 kA/cm{sup 2}. Linewidth measurements on very high reflectivity VCSEL's have indicated widths as low as 85 MHz and linewidth-power products of 5 MHz {center dot} mW.

• OSTI ID: 5627409
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 27:6; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606 -- Other Materials-- Physical Properties-- (1992-)
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
440600 -- Optical Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
CURRENTS
DESIGN
ELECTRIC CURRENTS
EMISSION
FIELD EMISSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASER CAVITIES
LASER MATERIALS
LASER MIRRORS
LASERS
MATERIALS
MIRRORS
MODE SELECTION
OPTICAL PROPERTIES
PARAMETRIC ANALYSIS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE PROPERTIES
THRESHOLD CURRENT