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Title: Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation

Abstract

The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.

Authors:
; ;  [1]
  1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22749729
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
61 RADIATION PROTECTION AND DOSIMETRY; IONIZING RADIATIONS; RELAXATION TIME; SCHOTTKY BARRIER DIODES; TRANSPORT THEORY

Citation Formats

Puzanov, A. S., E-mail: aspuzanov@inbox.ru, Obolenskiy, S. V., and Kozlov, V. A. Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation. United States: N. p., 2018. Web. doi:10.1134/S1063782618110209.
Puzanov, A. S., E-mail: aspuzanov@inbox.ru, Obolenskiy, S. V., & Kozlov, V. A. Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation. United States. doi:10.1134/S1063782618110209.
Puzanov, A. S., E-mail: aspuzanov@inbox.ru, Obolenskiy, S. V., and Kozlov, V. A. Thu . "Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation". United States. doi:10.1134/S1063782618110209.
@article{osti_22749729,
title = {Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation},
author = {Puzanov, A. S., E-mail: aspuzanov@inbox.ru and Obolenskiy, S. V. and Kozlov, V. A.},
abstractNote = {The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.},
doi = {10.1134/S1063782618110209},
journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 52,
place = {United States},
year = {2018},
month = {11}
}