Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation

Journal Article · Thu Nov 15 00:00:00 EST 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618110209· OSTI ID:22749729

Obolenskiy, S. V.; Kozlov, V. A. ^[1]

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1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)

The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.

• OSTI ID: 22749729
• Journal Information: Semiconductors, Vol. 52, Issue 11; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

61 RADIATION PROTECTION AND DOSIMETRY
IONIZING RADIATIONS
RELAXATION TIME
SCHOTTKY BARRIER DIODES
TRANSPORT THEORY