Defect-related photoluminescence emission from annealed ZnO films deposited on AlN substrates

Journal Article · Wed Nov 15 04:00:00 EST 2017 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2017.07.042· OSTI ID:22730447

Ding, Jijun; Chen, Haixia; Fu, Haiwei

Highlights: • ZnO film is deposited on AlN substrates based on both have individual excellent optical properties. • Electron transitions from V{sub Al}-O{sub N} defect energy level in AlN to the Zn vacancies deep levels in ZnO induce blue emission. • Excellent blue emissions are obtained due to the synergistic effect between ZnO and AlN. - Abstract: ZnO film deposited on AlN shows excellent blue emission. Photoluminescence (PL) emission is further enhanced by annealed treatment. The corresponding emission mechanism is discussed. V{sub Al}-O{sub N} are the dominant form of V{sub Al} in as grown AlN samples. When the energy of the incident photons is just enough to pump the electrons up to the V{sub Al}-O{sub N} energy level, a mass of electrons can be directly trapped by the V{sub Al}-O{sub N} defect centers, which will induce effective transitions from these defect energy level to the top of the valence band, and then transitions to Zn vacancies levels in ZnO due to similar lattice constants between ZnO and AlN. The energy interval between the V{sub Al}-O{sub N} in AlN and the Zn vacancies defect states in ZnO is about 2.96 eV, which is well consistent with the energy of the blue peak at 420 nm (2.96 eV).

• OSTI ID: 22730447
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Vol. 95; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ANNEALING
DEFECTS
DEPOSITION
DEPOSITS
EMISSIVITY
ENERGY LEVELS
FILMS
LATTICE PARAMETERS
PHOTOLUMINESCENCE
SUBSTRATES
VACANCIES
ZINC OXIDES