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Title: Defect-related photoluminescence emission from annealed ZnO films deposited on AlN substrates

Abstract

Highlights: • ZnO film is deposited on AlN substrates based on both have individual excellent optical properties. • Electron transitions from V{sub Al}-O{sub N} defect energy level in AlN to the Zn vacancies deep levels in ZnO induce blue emission. • Excellent blue emissions are obtained due to the synergistic effect between ZnO and AlN. - Abstract: ZnO film deposited on AlN shows excellent blue emission. Photoluminescence (PL) emission is further enhanced by annealed treatment. The corresponding emission mechanism is discussed. V{sub Al}-O{sub N} are the dominant form of V{sub Al} in as grown AlN samples. When the energy of the incident photons is just enough to pump the electrons up to the V{sub Al}-O{sub N} energy level, a mass of electrons can be directly trapped by the V{sub Al}-O{sub N} defect centers, which will induce effective transitions from these defect energy level to the top of the valence band, and then transitions to Zn vacancies levels in ZnO due to similar lattice constants between ZnO and AlN. The energy interval between the V{sub Al}-O{sub N} in AlN and the Zn vacancies defect states in ZnO is about 2.96 eV, which is well consistent with the energy of the bluemore » peak at 420 nm (2.96 eV).« less

Authors:
; ;
Publication Date:
OSTI Identifier:
22730447
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 95; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ANNEALING; DEFECTS; DEPOSITION; DEPOSITS; EMISSIVITY; ENERGY LEVELS; FILMS; LATTICE PARAMETERS; PHOTOLUMINESCENCE; SUBSTRATES; VACANCIES; ZINC OXIDES

Citation Formats

Ding, Jijun, Chen, Haixia, and Fu, Haiwei. Defect-related photoluminescence emission from annealed ZnO films deposited on AlN substrates. United States: N. p., 2017. Web. doi:10.1016/J.MATERRESBULL.2017.07.042.
Ding, Jijun, Chen, Haixia, & Fu, Haiwei. Defect-related photoluminescence emission from annealed ZnO films deposited on AlN substrates. United States. doi:10.1016/J.MATERRESBULL.2017.07.042.
Ding, Jijun, Chen, Haixia, and Fu, Haiwei. Wed . "Defect-related photoluminescence emission from annealed ZnO films deposited on AlN substrates". United States. doi:10.1016/J.MATERRESBULL.2017.07.042.
@article{osti_22730447,
title = {Defect-related photoluminescence emission from annealed ZnO films deposited on AlN substrates},
author = {Ding, Jijun and Chen, Haixia and Fu, Haiwei},
abstractNote = {Highlights: • ZnO film is deposited on AlN substrates based on both have individual excellent optical properties. • Electron transitions from V{sub Al}-O{sub N} defect energy level in AlN to the Zn vacancies deep levels in ZnO induce blue emission. • Excellent blue emissions are obtained due to the synergistic effect between ZnO and AlN. - Abstract: ZnO film deposited on AlN shows excellent blue emission. Photoluminescence (PL) emission is further enhanced by annealed treatment. The corresponding emission mechanism is discussed. V{sub Al}-O{sub N} are the dominant form of V{sub Al} in as grown AlN samples. When the energy of the incident photons is just enough to pump the electrons up to the V{sub Al}-O{sub N} energy level, a mass of electrons can be directly trapped by the V{sub Al}-O{sub N} defect centers, which will induce effective transitions from these defect energy level to the top of the valence band, and then transitions to Zn vacancies levels in ZnO due to similar lattice constants between ZnO and AlN. The energy interval between the V{sub Al}-O{sub N} in AlN and the Zn vacancies defect states in ZnO is about 2.96 eV, which is well consistent with the energy of the blue peak at 420 nm (2.96 eV).},
doi = {10.1016/J.MATERRESBULL.2017.07.042},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 95,
place = {United States},
year = {2017},
month = {11}
}