skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Structural and electrical properties of K{sub 3}Li{sub 2}Nb{sub 5}O{sub 15} thin film grown by pulsed laser deposition

Journal Article · · Materials Research Bulletin
 [1];  [2]; ;  [1]
  1. LPMC, Université de Picardie Jules Verne, 33 rue saint Leu, 80039 Amiens cedex (France)
  2. LMCN, F.S.T.G. Université Cadi Ayyad Marrakech (Morocco)

Highlights: • (001)KLN tetragonal tungsten bronze thin film has been successfully deposited on MgO substrate using PLD. • Smooth and droplets-free surface has been obtained as evidenced by RHEED and AFM. • Impedance spectroscopy shows Debye type dielectric relaxation. • The ferroelectric character of the obtained (001)KLN film has been evidenced using capacitance voltage measurement. - Abstract: Potassium lithium niobate K{sub 3}Li{sub 2}Nb{sub 5}O{sub 15} (KLN) with tetragonal tungsten bronze-type structure (TTB) thin film was successfully deposited on MgO substrate by pulsed laser ablation method. The substrate was coated by a perovskite conductive layer of La{sub 0.5}Sr{sub 0.5}CoO{sub 3}. X-ray diffraction revealed (001) orientation with low mosaicity. The oriented film had smooth and droplets-free surface as evidenced by reflection high electron energy diffraction and atomic force microscopy. Using Pt top electrode, dielectric measurements indicated stable dielectric permittivity of about 400 up to 10{sup 5} Hz. A dielectric relaxation was also observed. Moreover, the capacitance voltage measurements of the obtained (001)KLN film show ferroelectric behavior. Our results provide useful insights into the growth of tetragonal tungsten and other complex materials. These results will be useful for the growth and integration of epitaxial TTB thin films on perovskite and Si substrates.

OSTI ID:
22730420
Journal Information:
Materials Research Bulletin, Vol. 94; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
Country of Publication:
United States
Language:
English