Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure

Journal Article · Thu Sep 01 04:00:00 EDT 2016 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QEL16181· OSTI ID:22724569

Sokolova, Z. N.; Pikhtin, N. A.; Tarasov, I. S. ^[1]

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1. Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)

Threshold characteristics of a semiconductor quantum-well (QW) laser are calculated using the global electroneutrality condition, which includes charge carriers both in the active and waveguide regions and thus presents an equality of the total charge of electrons to the total charge of holes in these two regions. It is shown that at the lasing threshold, the densities of electrons in the QW and the waveguide region are not equal to the densities of holes in these regions, i.e., the local electroneutrality condition is violated in each of the regions. Depending on the velocities of the carrier capture from the waveguide region into the QW, the electron density can be either higher or lower than the hole density (both in the QW and in the waveguide region). The charge of the carriers of each sign in the waveguide region is shown to be greater than that in the QW. (paper)

• OSTI ID: 22724569
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Journal Name: Quantum Electronics (Woodbury, N.Y.) Journal Issue: 9 Vol. 46; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
ELECTRON DENSITY
ELECTRONS
HOLES
LASER RADIATION
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
VELOCITY
WAVEGUIDES