Adsorption of dysprosium on the graphite (0001) surface: Nucleation and growth at 300 K

Kwolek, Emma J.; Lii-Rosales, Ann; Lei, Huaping; Wang, Cai-Zhuang; Tringides, Michael C.; Evans, James W.; Wallingford, Mark; Zhou, Yinghui

doi:10.1063/1.4953611

Title: Adsorption of dysprosium on the graphite (0001) surface: Nucleation and growth at 300 K

Journal Article · Wed Dec 07 00:00:00 EST 2016 · Journal of Chemical Physics

DOI:https://doi.org/10.1063/1.4953611· OSTI ID:22679354

Kwolek, Emma J.; Lii-Rosales, Ann ^[1]; Lei, Huaping; Wang, Cai-Zhuang; Tringides, Michael C.; Evans, James W. ^[1]; Wallingford, Mark; Zhou, Yinghui ^[1]

The Ames Laboratory, Ames, Iowa 50011 (United States)

We have studied nucleation and growth of Dy islands on the basal plane of graphite at 300 K using scanning tunneling microscopy, density functional theory (DFT) in a form that includes van der Waals interactions, and analytic theory. The interaction of atomic Dy with graphite is strong, while the diffusion barrier is small. Experiment shows that at 300 K, the density of nucleated islands is close to the value predicted for homogeneous nucleation, using critical nucleus size of 1 and the DFT-derived diffusion barrier. Homogeneous nucleation is also supported by the monomodal shape of the island size distributions. Comparison with the published island density of Dy on graphene shows that the value is about two orders of magnitude smaller on graphite, which can be attributed to more effective charge screening in graphite. The base of each island is 3 atomic layers high and atomically ordered, forming a coincidence lattice with the graphite. Islands resist coalescence, probably due to multiple rotational orientations associated with the coincidence lattice. Upper levels grow as discernible single-atom layers. Analysis of the level populations reveals significant downward interlayer transport, which facilitates growth of the base. This island shape is metastable, since more compact three-dimensional islands form at elevated growth temperature.

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OSTI ID:: 22679354

Journal Information:: Journal of Chemical Physics, Vol. 145, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606

Country of Publication:: United States

Language:: English

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