Synthesis, structural, electronic and linear electro-optical features of new quaternary Ag{sub 2}Ga{sub 2}SiS{sub 6} compound

Journal Article · Wed Feb 15 00:00:00 EST 2017 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/J.JSSC.2016.12.011· OSTI ID:22658207

Myronchuk, G. L. ^[1]; Parasyuk, O. V. ^[2]; Khyzhun, O. Y. ^[3]; Fedorchuk, A. O. ^[4]; Pavlyuk, V. V. ^[5]; Kozer, V. R.; Sachanyuk, V. P. ^[2]; El-Naggar, A. M. ^[6]; Albassam, A. A. ^[7]; Jedryka, J.; Kityk, I. V. ^[8]

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1. Department of Solid State Physics, Lesya Ukrainka Eastern European National University, 13 Voli Ave., Lutsk 43025 (Ukraine)
2. Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Ave., Lutsk 43025 (Ukraine)
3. Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky St., Kyiv 03142 (Ukraine)
4. Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, 50 Pekarska Street, Lviv 79010 (Ukraine)
5. Department of Inorganic Chemistry, Ivan Franko National University of Lviv, 6 Kyryla and Mefodiya St., 79005 Lviv (Ukraine)
6. Physics Department, Faculty of Science, Ain Shams University, Abassia, Cairo 11566 (Egypt)
7. Research Chair of Exploitation of Renewable Energy Applications in Saudi Arabia, Physics & Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)
8. Faculty of Electrical Engineering, Czestochowa University Technology, Armii Krajowej 17, Czestochowa (Poland)

For the first time phase equilibria and phase diagram of the AgGaS{sub 2}–SiS{sub 2} system were successfully explored by differential thermal and X-ray phase analysis methods. Crystal structure of low-temperature (LT) modification of Ag{sub 2}Ga{sub 2}SiS{sub 6} (LРў- Ag{sub 2}Ga{sub 2}SiS{sub 6}) was studied by X-ray powder method and it belongs to tetragonal space group I-42d, with unit cell parameters a=5.7164(4) Å, c=9.8023(7) Å, V=320.32(7) Å{sup 3}. Additional details regarding the crystal structure exploration are available at the web page Fachinformationszentrum Karlsruhe. X-ray photoelectron core-level and valence-band spectra were measured for pristine LРў- Ag{sub 2}Ga{sub 2}SiS{sub 6} crystal surface. In addition, the X-ray photoelectron valence-band spectrum of LРў-Ag{sub 2}Ga{sub 2}SiS{sub 6} was matched on a common energy scale with the X-ray emission S Kβ{sub 1,3} and Ga Kβ{sub 2} bands, which give information on the energy distribution of the S 3p and Ga 4p states, respectively. The presented X-ray spectroscopy results indicate that the valence S p and Ga p atomic states contribute mainly to the upper and central parts of the valence band of LРў-Ag{sub 2}Ga{sub 2}SiS{sub 6}, respectively, with a less significant contribution also to other valence-band regions. Band gap energy was estimated by measuring the quantum energy in the spectral range of the fundamental absorption. We have found that energy gap Eg is equal to 2.35 eV at 300 K. LT-Ag{sub 2}Ga{sub 2}SiS{sub 6} is a photosensitive material and reveals two spectral maxima on the curve of spectral photoconductivity spectra at λ{sub max1} =590 nm and λ{sub max2} =860 nm. Additionally, linear electro-optical effect of LT-Ag{sub 2}Ga{sub 2}SiS{sub 6} for the wavelengths of a cw He-Ne laser at 1150 nm was explored. - Graphical abstract: Manuscript present the technology of growth and investigation of properties a new quaternary compound Ag{sub 2}Ga{sub 2}SiS{sub 6} including the detailed study of the phase equilibria in the AgGaS{sub 2}–SiS{sub 2} system to determine the physico-chemical conditions of its formation. We examined crystal structure of the compound by X-ray powder method, its electronic structure by XPS method. Finally we have found these crystals like promising material for nonlinear optical, electrooptical and piezoelectric applications. - Highlights: • Phase diagram of the AgGaS{sub 2}–SiS{sub 2} system was successfully described at first time. • Crystal Ag{sub 2}Ga{sub 2}SiS{sub 6} was grown and its structure was determined. • Electronic structure and chemical bonding of the Ag{sub 2}Ga{sub 2}SiS{sub 6} crystal were examined by. • X-ray photoelectron spectroscopy (XPS) and X-ray emission spectroscopy (XES) methods. • Optical and photoelectrical properties were investigated.

• OSTI ID: 22658207
• Journal Information: Journal of Solid State Chemistry, Vol. 246; Other Information: Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CHEMICAL BONDS
CRYSTAL GROWTH
CRYSTAL LATTICES
ELECTRONIC STRUCTURE
ENERGY SPECTRA
EXPERIMENTAL DATA
GALLIUM COMPOUNDS
PHASE DIAGRAMS
SILICON SULFIDES
SILVER COMPOUNDS
SPACE GROUPS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
X-RAY PHOTOELECTRON SPECTROSCOPY