The influence of A-site rare-earth for barium substitution on the chemical structure and ferroelectric properties of BZT thin films
- Department of Inorganic Chemistry, University of Barcelona, C/Marti i Franques, 1-11, 08028 Barcelona (Spain)
- Department of Physics, Universidad del Valle, Building 320-3001, Cali (Colombia)
- Center of Excellence on Novel Materials, Universidad del Valle, A.A. 25360, Cali (Colombia)
Rare-earth (RE) doped Ba(Zr,Ti)O{sub 3} (BZT) thin films were prepared by rf-magnetron sputtering from a Ba{sub 0.90}Ln{sub 0.067}Zr{sub 0.09}Ti{sub 0.91}O{sub 3} (Ln=La, Nd) target. The films were deposited at a substrate temperature of 600 deg. C in a high oxygen pressure atmosphere. X-ray diffraction (XRD) patterns of RE-BZT films revealed a <001> epitaxial crystal growth on Nb-doped SrTiO{sub 3}, <001> and <011> growth on single-crystal Si, and a <111>-preferred orientation on Pt-coated Si substrates. Scanning electron microscopy (SEM) showed uniform growth of the films deposited, along with the presence of crystals of about half-micron size on the film's surface. Transmission electron microscopy (TEM) evidenced high crystalline films with thicknesses of about 100 nm for 30 min of sputtering. Electron-probe microanalysis (EPMA) corroborated the growth rate (3.0-3.5 nm/min) of films deposited on Pt-coated Si substrates. X-ray photoelectron spectroscopy (XPS), in depth profile mode, showed variations in photoelectron Ti 2p doublet positions at lower energies with spin-orbital distances characteristic of BaTiO{sub 3}-based compounds. The XPS analysis revealed that lanthanide ions positioned onto the A-site of the BZT-perovskite structure increasing the MO{sub 6}-octahedra distortion (M=Ti, Zr) and, thereby, modifying the Ti-O binding length. Polarization-electric field hysteresis loops on Ag/RE-doped BZT/Pt capacitor showed good ferroelectric behavior and higher remanent polarization values than corresponding non-doped system. - Graphical abstract: XPS narrow-scan spectra of Ti 2p doublets of the Nd-doped BZT films deposited on Pt-coated Si substrate.
- OSTI ID:
- 21372324
- Journal Information:
- Journal of Solid State Chemistry, Vol. 182, Issue 10; Other Information: DOI: 10.1016/j.jssc.2009.07.013; PII: S0022-4596(09)00314-4; Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
Similar Records
X-ray photoelectron spectroscopy and structural analysis of amorphous SiO{sub x}N{sub y} films deposited at low temperatures
Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films
Related Subjects
BARIUM COMPOUNDS
DOPED MATERIALS
ELECTRON MICROPROBE ANALYSIS
EPITAXY
FERROELECTRIC MATERIALS
GRAIN ORIENTATION
LANTHANUM COMPOUNDS
MAGNETRONS
MONOCRYSTALS
NEODYMIUM COMPOUNDS
PEROVSKITE
SCANNING ELECTRON MICROSCOPY
SPUTTERING
STRONTIUM TITANATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZIRCONIUM COMPOUNDS
ALKALINE EARTH METAL COMPOUNDS
CHEMICAL ANALYSIS
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
CRYSTALS
DIELECTRIC MATERIALS
DIFFRACTION
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EQUIPMENT
FILMS
MATERIALS
MICROANALYSIS
MICROSCOPY
MICROSTRUCTURE
MICROWAVE EQUIPMENT
MICROWAVE TUBES
MINERALS
NONDESTRUCTIVE ANALYSIS
ORIENTATION
OXIDE MINERALS
OXYGEN COMPOUNDS
PEROVSKITES
PHOTOELECTRON SPECTROSCOPY
RARE EARTH COMPOUNDS
SCATTERING
SPECTROSCOPY
STRONTIUM COMPOUNDS
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS