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Title: The influence of A-site rare-earth for barium substitution on the chemical structure and ferroelectric properties of BZT thin films

Journal Article · · Journal of Solid State Chemistry
 [1]; ;  [1];  [2];  [3]
  1. Department of Inorganic Chemistry, University of Barcelona, C/Marti i Franques, 1-11, 08028 Barcelona (Spain)
  2. Department of Physics, Universidad del Valle, Building 320-3001, Cali (Colombia)
  3. Center of Excellence on Novel Materials, Universidad del Valle, A.A. 25360, Cali (Colombia)

Rare-earth (RE) doped Ba(Zr,Ti)O{sub 3} (BZT) thin films were prepared by rf-magnetron sputtering from a Ba{sub 0.90}Ln{sub 0.067}Zr{sub 0.09}Ti{sub 0.91}O{sub 3} (Ln=La, Nd) target. The films were deposited at a substrate temperature of 600 deg. C in a high oxygen pressure atmosphere. X-ray diffraction (XRD) patterns of RE-BZT films revealed a <001> epitaxial crystal growth on Nb-doped SrTiO{sub 3}, <001> and <011> growth on single-crystal Si, and a <111>-preferred orientation on Pt-coated Si substrates. Scanning electron microscopy (SEM) showed uniform growth of the films deposited, along with the presence of crystals of about half-micron size on the film's surface. Transmission electron microscopy (TEM) evidenced high crystalline films with thicknesses of about 100 nm for 30 min of sputtering. Electron-probe microanalysis (EPMA) corroborated the growth rate (3.0-3.5 nm/min) of films deposited on Pt-coated Si substrates. X-ray photoelectron spectroscopy (XPS), in depth profile mode, showed variations in photoelectron Ti 2p doublet positions at lower energies with spin-orbital distances characteristic of BaTiO{sub 3}-based compounds. The XPS analysis revealed that lanthanide ions positioned onto the A-site of the BZT-perovskite structure increasing the MO{sub 6}-octahedra distortion (M=Ti, Zr) and, thereby, modifying the Ti-O binding length. Polarization-electric field hysteresis loops on Ag/RE-doped BZT/Pt capacitor showed good ferroelectric behavior and higher remanent polarization values than corresponding non-doped system. - Graphical abstract: XPS narrow-scan spectra of Ti 2p doublets of the Nd-doped BZT films deposited on Pt-coated Si substrate.

OSTI ID:
21372324
Journal Information:
Journal of Solid State Chemistry, Vol. 182, Issue 10; Other Information: DOI: 10.1016/j.jssc.2009.07.013; PII: S0022-4596(09)00314-4; Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
Country of Publication:
United States
Language:
English

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