Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy

Journal Article · Fri Jul 15 00:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616070198· OSTI ID:22649735

Parkhomenko, Ya. A.; Dement’ev, P. A.

The first results of the liquid-phase epitaxial growth of quantum dots in the InSb/GaSb system and atomic-force microscopy data on the structural characteristics of the quantum dots are reported. It is shown that the surface density, shape, and size of nanoislands depend on the deposition temperature and the chemical properties of the matrix surface. Arrays of InSb quantum dots on GaSb (001) substrates are produced in the temperature range T = 450–465°C. The average dimensions of the quantum dots correspond to a height of h = 3 nm and a base dimension of D = 30 nm; the surface density is 3 × 10{sup 9} cm{sup –2}.

• OSTI ID: 22649735
• Journal Information: Semiconductors, Vol. 50, Issue 7; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CHEMICAL PROPERTIES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DENSITY
DEPOSITION
GALLIUM ANTIMONIDES
INDIUM ANTIMONIDES
LIQUID PHASE EPITAXY
LIQUIDS
MATRIX MATERIALS
QUANTUM DOTS
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K