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Title: Carrier velocity effect on carbon nanotube Schottky contact

Abstract

One of the most important drawbacks which caused the silicon based technologies to their technical limitations is the instability of their products at nano-level. On the other side, carbon based materials such as carbon nanotube (CNT) as alternative materials have been involved in scientific efforts. Some of the important advantages of CNTs over silicon components are high mechanical strength, high sensing capability and large surface-to-volume ratio. In this article, the model of CNT Schottky transistor current which is under exterior applied voltage is employed. This model shows that its current has a weak dependence on thermal velocity corresponding to the small applied voltage. The conditions are quite different for high bias voltages which are independent of temperature. Our results indicate that the current is increased by Fermi velocity, but the I–V curves will not have considerable changes with the variations in number of carriers. It means that the current doesn’t increase sharply by voltage variations over different number of carriers.

Authors:
 [1]; ;  [2]
  1. Urmia University, Department of Electrical Engineering, Microelectronic Research Laboratory (Iran, Islamic Republic of)
  2. University Technology Malaysia, Department of Electronic Engineering (Malaysia)
Publication Date:
OSTI Identifier:
22649724
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 8; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CARBON NANOTUBES; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; SILICON; SURFACES; TRANSISTORS; VARIATIONS

Citation Formats

Fathi, Amir, E-mail: fathi.amir@hotmail.com, Ahmadi, M. T., E-mail: mt.ahmadi@urmia.ac.ir, and Ismail, Razali, E-mail: Razali@fke.utm.my. Carrier velocity effect on carbon nanotube Schottky contact. United States: N. p., 2016. Web. doi:10.1134/S1063782616080285.
Fathi, Amir, E-mail: fathi.amir@hotmail.com, Ahmadi, M. T., E-mail: mt.ahmadi@urmia.ac.ir, & Ismail, Razali, E-mail: Razali@fke.utm.my. Carrier velocity effect on carbon nanotube Schottky contact. United States. doi:10.1134/S1063782616080285.
Fathi, Amir, E-mail: fathi.amir@hotmail.com, Ahmadi, M. T., E-mail: mt.ahmadi@urmia.ac.ir, and Ismail, Razali, E-mail: Razali@fke.utm.my. Mon . "Carrier velocity effect on carbon nanotube Schottky contact". United States. doi:10.1134/S1063782616080285.
@article{osti_22649724,
title = {Carrier velocity effect on carbon nanotube Schottky contact},
author = {Fathi, Amir, E-mail: fathi.amir@hotmail.com and Ahmadi, M. T., E-mail: mt.ahmadi@urmia.ac.ir and Ismail, Razali, E-mail: Razali@fke.utm.my},
abstractNote = {One of the most important drawbacks which caused the silicon based technologies to their technical limitations is the instability of their products at nano-level. On the other side, carbon based materials such as carbon nanotube (CNT) as alternative materials have been involved in scientific efforts. Some of the important advantages of CNTs over silicon components are high mechanical strength, high sensing capability and large surface-to-volume ratio. In this article, the model of CNT Schottky transistor current which is under exterior applied voltage is employed. This model shows that its current has a weak dependence on thermal velocity corresponding to the small applied voltage. The conditions are quite different for high bias voltages which are independent of temperature. Our results indicate that the current is increased by Fermi velocity, but the I–V curves will not have considerable changes with the variations in number of carriers. It means that the current doesn’t increase sharply by voltage variations over different number of carriers.},
doi = {10.1134/S1063782616080285},
journal = {Semiconductors},
number = 8,
volume = 50,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}