Very low Schottky barrier height at carbon nanotube and silicon carbide interface

Journal Article · Mon Mar 23 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4916248· OSTI ID:22398786

Inaba, Masafumi; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu ^[1]; Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko ^[2]; Hiraiwa, Atsushi ^[3]; Kawarada, Hiroshi ^[1]

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1. Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan)
2. EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan)
3. Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan)

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

• OSTI ID: 22398786
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CARBON NANOTUBES
CONCENTRATION RATIO
DIFFUSION BARRIERS
ELECTRIC CONTACTS
ELECTRONIC EQUIPMENT
HARDNESS
INTERFACES
SERVICE LIFE
SILICON CARBIDES
TITANIUM
TRANSISTORS
WEAR RESISTANCE