On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions
- Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswave output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).
- OSTI ID:
- 22649703
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 50; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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