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Title: Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors

Abstract

The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.

Authors:
 [1];  [2]; ;  [1];  [3]; ;  [1]
  1. National Research University of Electronic Technology (Russian Federation)
  2. Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation)
  3. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22649657
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 2; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY TELLURIDES; CHARGE CARRIERS; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; ENERGY LEVELS; GERMANIUM TELLURIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; THIN FILMS

Citation Formats

Sherchenkov, A. A., Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru, Lazarenko, P. I., Babich, A. V., Bogoslovskiy, N. A., Sagunova, I. V., and Redichev, E. N. Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors. United States: N. p., 2017. Web. doi:10.1134/S1063782617020191.
Sherchenkov, A. A., Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru, Lazarenko, P. I., Babich, A. V., Bogoslovskiy, N. A., Sagunova, I. V., & Redichev, E. N. Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors. United States. doi:10.1134/S1063782617020191.
Sherchenkov, A. A., Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru, Lazarenko, P. I., Babich, A. V., Bogoslovskiy, N. A., Sagunova, I. V., and Redichev, E. N. Wed . "Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors". United States. doi:10.1134/S1063782617020191.
@article{osti_22649657,
title = {Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors},
author = {Sherchenkov, A. A. and Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru and Lazarenko, P. I. and Babich, A. V. and Bogoslovskiy, N. A. and Sagunova, I. V. and Redichev, E. N.},
abstractNote = {The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.},
doi = {10.1134/S1063782617020191},
journal = {Semiconductors},
number = 2,
volume = 51,
place = {United States},
year = {Wed Feb 15 00:00:00 EST 2017},
month = {Wed Feb 15 00:00:00 EST 2017}
}