Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
- Russian Academy of Sciences, Scientific and Technological Center for Microelectronics (Russian Federation)
- Russian Academy of Sciences, Ioffe Institute (Russian Federation)
The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures (λ{sub max} = 3.4 μm) is measured and analyzed; the structural features of the photodiodes, including the reflective properties of the ohmic contacts, are taken into account. Optical area enhancement due to multiple internal reflection in photodiodes with different geometric characteristics is estimated.
- OSTI ID:
- 22649639
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 51; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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