Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD

Journal Article · Sun Jan 15 04:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617010201· OSTI ID:22649624

Rybalchenko, D. V.; Mintairov, S. A.; Salii, R. A.; Shvarts, M. Z.; Timoshina, N. Kh.

Metamorphic Ga{sub 0.76}In{sub 0.24}As heterostructures for photovoltaic converters are grown by the MOCVD (metal–organic chemical vapor deposition) technique. It is found that, due to the valence-band offset at the p-In{sub 0.24}Al{sub 0.76}As/p-In{sub 0.24}Ga{sub 0.76}As (wide-gap window/emitter) heterointerface, a potential barrier for holes arises as a result of a low carrier concentration in the wide-gap material. The use of an InAlGaAs solid solution with an Al content lower than 40% makes it possible to raise the hole concentration in the widegap window up ~9 × 10{sup 18} cm{sup –3} and completely remove the potential barrier, thereby reducing the series resistance of the device. The parameters of an GaInAs metamorphic buffer layer with a stepwise In content profile are calculated and its epitaxial growth conditions are optimized, which improves carrier collection from the n-GaInAs base region and provides a quantum efficiency of 83% at a wavelength of 1064 nm. Optimization of the metamorphic heterostructure of the photovoltaic converter results in that its conversion efficiency for laser light with a wavelength of 1064 nm is 38.5%.

• OSTI ID: 22649624
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 51; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
ENERGY CONVERSION
ENERGY GAP
EPITAXY
GALLIUM ARSENIDES
HETEROJUNCTIONS
HOLES
INDIUM ARSENIDES
LAYERS
ORGANOMETALLIC COMPOUNDS
P-TYPE CONDUCTORS
PHOTOVOLTAIC EFFECT
POTENTIALS
QUANTUM EFFICIENCY
SOLID SOLUTIONS