On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Journal Article · Sun Jan 15 00:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617010249· OSTI ID:22649620

Voronenkov, V. V. ^[1]; Virko, M. V.; Kogotkov, V. S.; Leonidov, A. A. ^[2]; Pinchuk, A. V.; Zubrilov, A. S.; Gorbunov, R. I.; Latishev, F. E.; Bochkareva, N. I.; Lelikov, Y. S.; Tarkhin, D. V.; Smirnov, A. N.; Davydov, V. Y. ^[1]; Sheremet, I. A. ^[3]

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1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
2. Peter the Great St. Petersburg Polytechnic University (Russian Federation)
3. Financial University under the Government of the Russian Federation (Russian Federation)

The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.

• OSTI ID: 22649620
• Journal Information: Semiconductors, Vol. 51, Issue 1; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ATOMIC FORCE MICROSCOPY
CARBON DIOXIDE LASERS
CURRENT DENSITY
DOPED MATERIALS
GALLIUM NITRIDES
INFRARED RADIATION
INTERFACES
LASER RADIATION
MORPHOLOGY
N-TYPE CONDUCTORS
RAMAN SPECTROSCOPY
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SCHOTTKY BARRIER DIODES
STRESSES
SUBSTRATES
THIN FILMS