Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

Journal Article · Sun Feb 14 23:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616020263· OSTI ID:22645611

Zemlyakov, V. E.; Volkov, V. V.; Parnes, Ya. M.; Vyuginov, V. N. ^[1]; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Tsatsulnikov, A. F. ^[2]; Cherkashin, N. A. ^[3]; Mizerov, M. N. ^[2]; Ustinov, V. M. ^[4]

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1. Joint Stock Company “Svetlana-Electronpribor” (Russian Federation)
2. Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation)
3. CEMES-CNRS-Université de Toulouse (France)
4. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.

• OSTI ID: 22645611
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
COMPUTERIZED SIMULATION
ELECTRON MOBILITY
GALLIUM NITRIDES
HETEROJUNCTIONS
IMPLEMENTATION
LAYERS
MICROWAVE RADIATION
OPTIMIZATION
TRANSISTORS