Lifetime of excitons localized in Si nanocrystals in amorphous silicon

Journal Article · Sun May 15 00:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616050092· OSTI ID:22645544

Gusev, O. B.; Yassievich, I. N. ^[1]; Kukin, A. V.; Terukova, E. E.; Terukov, E. I. ^[2]

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1. Ioffe Institute (Russian Federation)
2. R and D Center of thin-film technology for energetic under Ioffe Physicotechnical Institute (Russian Federation)

The introduction of nanocrystals plays an important role in improving the stability of the amorphous silicon films and increasing the carrier mobility. Here we report results of the study on the photoluminescence and its dynamics in the films of amorphous hydrogenated silicon containing less than 10% of silicon nanocrystals. The comparing of the obtained experimental results with the calculated probability of the resonant tunneling of the excitons localized in silicon nanocrystals is presented. Thus, it has been estimated that the short lifetime of excitons localized in Si nanocrystal is controlled by the resonant tunneling to the nearest tail state of the amorphous matrix.

• OSTI ID: 22645544
• Journal Information: Semiconductors, Vol. 50, Issue 5; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CARRIER MOBILITY
COMPARATIVE EVALUATIONS
EXCITONS
HYDROGENATION
LIFETIME
MATRIX MATERIALS
NANOSTRUCTURES
PHASE STABILITY
PHOTOLUMINESCENCE
SILICON
THIN FILMS
TUNNEL EFFECT