Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

Journal Article · Sun May 15 04:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616050225· OSTI ID:22645537

Bakhvalov, K. V.; Lyutetskiy, A. V.; Pikhtin, N. A.; Tarasov, I. S. ^[1]; Asryan, L. V. ^[2]

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1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
2. Virginia Polytechnic Institute and State University (United States)

Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al{sub 0.1}Ga{sub 0.9}As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structures. It is found that the capture velocity into deep quantum wells is significantly lower than into shallow ones.

• OSTI ID: 22645537
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
ELECTRON CAPTURE
GALLIUM ARSENIDES
INDIUM ARSENIDES
ORGANOMETALLIC COMPOUNDS
QUANTUM EFFICIENCY
QUANTUM WELLS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
STRAINS
THRESHOLD CURRENT