X-ray diffraction characterization of epitaxial CVD diamond films with natural and isotopically modified compositions

Journal Article · Tue Nov 15 00:00:00 EST 2016 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774516060122· OSTI ID:22645379

Voloshin, A. E. ^[1]; Ralchenko, V. G.; Bolshakov, A. P. ^[2]; Romanov, D. A. ^[3]; Khomich, A. A. ^[2]; Sozontov, E. A. ^[4]

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1. Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics” (Russian Federation)
2. Russian Academy of Sciences, Prokhorov General Physics Institute (Russian Federation)
3. Bauman Moscow State Technical University, Kaluga Branch (Russian Federation)
4. National Research Centre “Kurchatov Institute” (Russian Federation)

Comparative investigations of homoepitaxial diamond films with natural and modified isotopic compositions, grown by chemical vapor deposition (CVD) on type-Ib diamond substrates, are carried out using double-crystal X-ray diffractometry and topography. The lattice mismatch between the substrate and film is precisely measured. A decrease in the lattice constant on the order of (Δa/a){sub relax} ∼ (1.1–1.2) × 10{sup –4} is recorded in isotopically modified {sup 13}C (99.96%) films. The critical thicknesses of pseudomorphic diamond films is calculated. A significant increase in the dislocation density due to the elastic stress relaxation is revealed by X-ray topography.

• OSTI ID: 22645379
• Journal Information: Crystallography Reports, Vol. 61, Issue 6; Other Information: Copyright (c) 2016 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL VAPOR DEPOSITION
DIAMONDS
DISLOCATIONS
EPITAXY
FILMS
ISOTOPE RATIO
LATTICE PARAMETERS
STRESS RELAXATION
X-RAY DIFFRACTION