Measurements of electrophysical characteristics of semiconductor structures with the use of microwave photonic crystals
- Russian Academy of Sciences, Kotelnikov Institute of Radio Engineering and Electronics (Russian Federation)
- Chernyshevsky National Research State University (Russian Federation)
A method is proposed for the measurement of the electrophysical characteristics of semiconductor structures: the electrical conductivity of the n layer, which plays the role of substrate for a semiconductor structure, and the thickness and electrical conductivity of the strongly doped epitaxial n{sup +} layer. The method is based on the use of a one-dimensional microwave photonic crystal with a violation of periodicity containing the semiconductor structure under investigation. The characteristics of epitaxial gallium-arsenide structures consisting of an epitaxial layer and the semi-insulating substrate measured by this method are presented.
- OSTI ID:
- 22645318
- Journal Information:
- Semiconductors, Vol. 50, Issue 13; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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