Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Journal Article · Thu Dec 15 00:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616120204· OSTI ID:22645291

Demidov, E. V.; Drozdov, M. N.; Murel, A. V.; Khrykin, O. I.; Shashkin, V. I. ^[1]; Lobaev, M. A.; Gorbachev, A. M.; Viharev, A. L.; Bogdanov, S. A.; Isaev, V. A.; Muchnikov, A. B.; Chernov, V. V.; Radishchev, D. B.; Batler, D. E. ^[2]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Russian Academy of Sciences, Institute of Applied Physics (Russian Federation)

The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 10{sup 17} to ~10{sup 20} at cm{sup –3} and of δ doping to the surface concentration (0.3–5) × 10{sup 13} at cm{sup –3} are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.

• OSTI ID: 22645291
• Journal Information: Semiconductors, Vol. 50, Issue 12; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
CRYSTAL STRUCTURE
DIAMONDS
DOPED MATERIALS
EPITAXY
ETCHING
HOLE MOBILITY
HOLES
LAYERS
SURFACES
VAPORS