Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

Journal Article · Wed Dec 14 23:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616120228· OSTI ID:22645287

Tikhov, S. V.; Gorshkov, O. N.; Kasatkin, A. P.; Antonov, I. N.; Vihrova, O. V.; Morozov, A. I. ^[1]

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1. Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.

• OSTI ID: 22645287
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
LAYERS
N-TYPE CONDUCTORS
QUANTUM DOTS
SILICON OXIDES
SURFACES
YTTRIUM OXIDES
ZIRCONIUM OXIDES