Stopping characteristics of boron and indium ions in silicon
Journal Article
·
· Physics of Atomic Nuclei
- National Research Nuclear University MEPhI (Russian Federation)
The mean range and its standard deviation are calculated for boron ions implanted into silicon with energies below 10 keV. Similar characteristics are calculated for indium ions with energies below 200 keV. The obtained results are presented in tabular and graphical forms. These results may help in the assessment of conditions of production of integrated circuits with nanometer-sized elements.
- OSTI ID:
- 22612515
- Journal Information:
- Physics of Atomic Nuclei, Vol. 79, Issue 14; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7788
- Country of Publication:
- United States
- Language:
- English
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