Temperature-dependent dielectric and energy-storage properties of Pb(Zr,Sn,Ti)O{sub 3} antiferroelectric bulk ceramics

Journal Article · Sun May 15 04:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4948915· OSTI ID:22611708

Chen, Xuefeng; Liu, Zhen; Xu, Chenhong; Cao, Fei; Wang, Genshui; Dong, Xianlin ^[1]

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1. Key laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai (China)

The dielectric and energy-storage properties of Pb{sub 0.99}Nb{sub 0.02}[(Zr{sub 0.60}Sn{sub 0.40}){sub 0.95}Ti{sub 0.05}]{sub 0.98}O{sub 3} (PNZST) bulk ceramics near the antiferroelectric (AFE)-ferroelectric (FE) phase boundary are investigated as a function of temperature. Three characteristic temperatures T{sub 0}, T{sub C}, T{sub 2} are obtained from the dielectric temperature spectrum. At different temperature regions (below T{sub 0}, between T{sub 0} and T{sub C}, and above T{sub C}), three types of hysteresis loops are observed as square double loop, slim loop and linear loop, respectively. The switching fields and recoverable energy density all first increase and then decrease with increasing temperature, and reach their peak values at ∼T{sub 0}. These results provide a convenient method to optimize the working temperature of antiferroelectric electronic devices through testing the temperature dependent dielectric properties of antiferroelectric ceramics.

• OSTI ID: 22611708
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 5 Vol. 6; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CERAMICS
DIELECTRIC PROPERTIES
ELECTRONIC EQUIPMENT
ENERGY DENSITY
ENERGY STORAGE
FERROELECTRIC MATERIALS
HYSTERESIS
LEAD COMPOUNDS
NIOBIUM COMPOUNDS
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
SPECTRA
TEMPERATURE DEPENDENCE
TIN COMPOUNDS
TITANIUM COMPOUNDS
ZIRCONIUM COMPOUNDS